| PART |
Description |
Maker |
| UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431 |
1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 150ns
|
NEC
|
| M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system
Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| TC55257BFL-10L TC55257BFL-85 TC55257BPL-10 TC55257 |
85ns; V(dd/in): -0.3 to 7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM
(TC55257xxx) SILICON GATE CMOS 32768 WORD X 8 BIT STATIC RAM
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| M38503E4SS M38503MXH M37516RSS M38504E6FP M38504E6 |
RAM size:768 bytes; single-chip 8-bit CMOS microcomputer
RAM size:896 bytes; single-chip 8-bit CMOS microcomputer
RAM size:192 bytes; single-chip 8-bit CMOS microcomputer
RAM size:256 bytes; single-chip 8-bit CMOS microcomputer
Single Chip 8-Bit CMOS Microcomputer
3850 Series Microcontrollers: General Purpose with A/D Converter
RAM size:1536 bytes; single-chip 8-bit CMOS microcomputer
RAM size:640 bytes; single-chip 8-bit CMOS microcomputer
RAM size:384 bytes; single-chip 8-bit CMOS microcomputer
RAM size:512 bytes; single-chip 8-bit CMOS microcomputer
RAM size:1024 bytes; single-chip 8-bit CMOS microcomputer
RAM size:2048 bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power
512Kx8 bit CMOS static RAM, 100ns, low power
524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
PT 16C 16#16 PIN PLUG
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M5M51016BRT-10LL M5M51016BRT-10L D98007 M5M51016BT |
1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
From old datasheet system
1048576-BIT(65536-16-1048576-BIT(65536-WORD WORDBY BY16-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| CDP1821C CDP1821C3 FN2983 CDP1821C_3 CDP1821CD3 CD |
From old datasheet system
High-Reliability CMOS 1024-Word x 1-Bit Static RAM 高可靠性的CMOS 1024字1位静态存储器
High-Reliability CMOS 1024-Word x 1-Bit Static RAM 1K X 1 STANDARD SRAM, 255 ns, CDIP16
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| MSM521216 |
65,536-Word ?16-Bit CMOS STATIC RAM(64k瀛??6浣????AM)
From old datasheet system
65,536-Word x 16-Bit CMOS STATIC RAM
|
OKI SEMICONDUCTOR CO., LTD.
|
| M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP |
From old datasheet system
1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
1048576-bit (65536-word by 16-bit) CMOS static RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| TC55V1403J-12 |
4M Word x 1 Bit/1M Word x 4 Bit CMOS Static RAM(4M x 1 1M x 4 CMOS 静RAM)
|
Toshiba Corporation
|
| MSM52V1001LP |
131,072-Word ×8-Bit CMOS STATIC RAM(128k字位静态RAM) 131,072词8位的CMOS静态RAM28K的字× 8位静态RAM）的
From old datasheet system
131,072-Word x 8-Bit CMOS STATIC RAM
|
OKI SEMICONDUCTOR CO., LTD.
|
| CAT22C10 22C10 CAT22C10P-30TE13 CAT22C10J-20TE13 C |
256-Bit Nonvolatile CMOS Static RAM
256-Bit Nonvolatile CMOS Static RAM 256位非易失性的CMOS静态RAM
256-BitNonvolatileCMOSStaticRAM
|
CatalystSemiconductor
CATALYST[Catalyst Semiconductor]
|
